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SnO2: rGO transparent semiconducting thin films under annealing by hydrazine—modification of optical gap and electrical resistance

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Abstract

In this paper, SnO2: rGO compound thin films were deposited on glass substrates by spray pyrolysis method. For the synthesis of SnO2: rGO thin films, different amounts of reduced graphene oxides (0, 25, 50, 75, 100, and 150 mg) were added to the solution. Then, the influence of reduced graphene oxide, and annealing by hydrazine as a reducing agent on the structural, electrical, and optical properties of these films were investigated. The results of XRD analysis in all the samples showed the SnO2 phase is formed and the intensity of peaks increases relatively after reducing with hydrazine and increasing the value of rGO. FE-SEM images of SnO2: rGO samples showed that grain size and porosity decreased after reduction with hydrazine. An enhancement of electrical properties was observed with the addition of reduced graphene oxide and annealing under hydrazine. The minimum sheet resistance equal to 0.42 kΩ/sq. for SnO2: rGO (50 mg) thin films was obtained. The Hall effect experiment also showed the n-type conductivity of all synthesized thin films, and the carrier concentration was calculated to be 1021 cm−3. In addition, the band gap values of the films in the range of 3.58–3.72 eV were obtained and this method is a successful technique for tuning of the band gap of SnO2 thin films.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Authors and Affiliations

  1. School of Physics, Damghan University, P.O. BOX: 41167-36716, Damghan, Iran

    P. Shayeghi Sabzevar & M. M. Bagheri-Mohagheghi

  2. Department of Physics, Faculty of Basic Sciences, Khatam Al-Anbia (PBU) University, Tehran, Iran

    A. Shirpay

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Contributions

All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by MMB-Mohagheghi, and PSS. The first draft of the manuscript was written by AS and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to M. M. Bagheri-Mohagheghi.

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Sabzevar, P.S., Bagheri-Mohagheghi, M.M. & Shirpay, A. SnO2: rGO transparent semiconducting thin films under annealing by hydrazine—modification of optical gap and electrical resistance. J Mater Sci: Mater Electron 34, 791 (2023). https://doi.org/10.1007/s10854-023-10225-z

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